FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

[Yogesh Singh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosi, Ai Niknejad, Chenming Hu] ↠ FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard ↠ Read Online eBook or Kindle ePUB. FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard Really nice book, one of the very few I would yuri sirenko Really nice book, one of the very few I would recommend.It is written by original authors of the model and is NOT just copy-and-paste from Berkeleys manual.Another one, and no less valuable asset, is on level=54 (planar MOSFET), by (notice same Prof. Hu)Weidong Liu and Che]

FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

Author :
Rating : 4.34 (984 Votes)
Asin : 0124200311
Format Type : paperback
Number of Pages : 304 Pages
Publish Date : 2013-10-04
Language : English

DESCRIPTION:

From the Back CoverThis book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard.The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters.Key Features:Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CMG standard model, providing an experts’ insight into the specifications of the standardThe first book on the industry-standard FinFET model - BSIM-CMGWith this book you will learn:Why you should use FinFETThe physics and operation of FinFETDetails of the FinFET standard model (BSIM-CMG)Parameter extraction in BSIM-CMGFinFET circuit design and simulation

Niknejad is the recipient of the 2012 ASEE Frederick Emmons Terman Award for his work and textbook on electromagnetics and RF integrated circuits. Currently Dr. He received his BS (2010) and MS (2012) degrees in Electrical Engineering from Korea Advanced Institute of Science and Technology (KAIST). degree at the University of California, Berkeley. He held a position as a lecturer at Universidad Tecnica Federico Santa Maria, Valparaiso, Chile, in 2012. Paydavosi is with Intel Corp., Orego

This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard.The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters.With this book you will learn:Why you should use FinFETThe physics and operation of FinFETDetails of the FinFET standard model (BSIM-CMG)Parameter extraction in BSIM-CMGFinFET circuit design and simulationAuthored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standardThe first book on the industry-standard FinFET model - BSIM-CMG

Really nice book, one of the very few I would yuri sirenko Really nice book, one of the very few I would recommend.It is written by original authors of the model and is NOT just copy-and-paste from Berkeley's manual.Another one, and no less valuable asset, is on level=54 (planar MOSFET), by (notice same Prof. Hu)Weidong Liu and Che

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